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| 95167 IRG4BC20K-SPBF Features High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free Short Circuit Rated UltraFast IGBT C VCES = 600V G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 9.0A Benefits n-channel As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGBC20K-S and IRGBC20M-S devices D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 16 9.0 32 32 10 20 29 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A s V mJ W C Thermal Resistance Parameter RqJC RqCS RqJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state) Weight Typ. 0.5 1.44 Max. 2.1 40 Units C/W g www.irf.com 1 04/22/04 IRG4BC20K-SPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS DV(BR)CES/DTJ VCE(ON) VGE(th) DVGE(th)/DTJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage 0.49 V/C VGE = 0V, IC = 1.0mA 2.00 IC = 6.0A VGE = 15V 2.27 2.8 IC = 9.0A Collector-to-Emitter Saturation Voltage V 3.01 IC = 16A See Fig.2, 5 2.43 IC = 9.0A , TJ = 150C Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -10 mV/C VCE = VGE, IC = 250A Forward Transconductance 2.9 4.3 S VCE = 100 V, IC = 9.0A 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current 2.0 A VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t sc t d(on) tr td(off) tf E ts Eon E off E ts LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 28 27 TJ = 25C ns 150 220 IC = 9.0A, VCC = 480V 100 150 VGE = 15V, RG = 50W 0.15 Energy losses include "tail" 0.25 mJ See Fig. 9,10,14 0.40 0.6 s VCC = 400V, TJ = 125C VGE = 15V, RG = 50W , VCPK < 500V 28 TJ = 150C, 29 IC = 9.0A, VCC = 480V ns 190 VGE = 15V, RG = 50W 190 Energy losses include "tail" 0.68 mJ See Fig. 11,14 0.07 TJ = 25C, VGE = 15V, RG = 50W 0.13 mJ IC = 6.0A, VCC = 480V 0.20 Energy losses include "tail" 7.5 nH Measured 5mm from package 450 VGE = 0V 61 pF VCC = 30V See Fig. 7 14 = 1.0MHz Details of note through are on the last page 2 www.irf.com IRG4BC20K-SPBF 5.0 For both: Triangular wave: 4.0 Duty cycle: 50% T J = 125C 55C T sink = 90C Gate drive as specified Load Current ( A ) Power Dissipation = 1.8W Clamp voltage: 80% of rated 3.0 Square wave: 60% of rated voltage 2.0 1.0 Ideal diodes 0.0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 I C, Collector-to-Emitter Current (A) 10 TJ = 150 o C TJ = 25 oC V CC = 50V 5s PULSE WIDTH 5 10 15 20 1 V GE = 15V 20s PULSE WIDTH 1 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC20K-SPBF 20 5.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 18 A Maximum DC Collector Current(A) 15 4.0 10 3.0 IC = 9.0A 9A 2.0 5 IC = 4.5 A 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 PDM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20K-SPBF 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 9.0A C, Capacitance (pF) 600 16 Cies 400 12 8 200 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 10 20 30 40 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 Total Switching Losses (mJ) 0.4 Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 9.0A I C = 9A 10 50W RG = Ohm VGE = 15V VCC = 480V IC = 18 A 1 IC = 9.0A 9A 0.3 IC = 4.5 A 0.2 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R , , Gate Resistance ( W ) RG G Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC20K-SPBF 5.0 3.0 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ VCC 4.0 VGE = Ohm 50W = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 2.0 1.0 0.0 0 8 16 24 32 40 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC20K-SPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 IRG4BC20K-SPBF Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50W , (See fig. 13a) Repetitive rating; pulse width limited by maximum D2Pak Package Outline junction temperature. Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS A N IR F 5 3 0 S W IT H L OT COD E 8024 AS S E M B L E D ON W W 02 , 2 00 0 IN T H E A S S E M B L Y L IN E "L " N o te : "P " in a s s e m b ly l in e p o s i tio n in d ic a te s " L e ad - F r e e " I N T E R N A T IO N A L R E C T IF IE R L OGO P AR T N U M B E R F 530S D AT E C O D E YE AR 0 = 2 00 0 W E E K 02 L IN E L AS S E M B L Y L O T CO D E OR IN T E R N AT IO N AL R E C T IF IE R L OGO P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N A L ) YE AR 0 = 2000 W E E K 02 A = A S S E M B L Y S IT E C O D E AS S E M B L Y LO T CO D E 8 www.irf.com IRG4BC20K-SPBF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 www.irf.com 9 |
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